Luminous TCAD Analysis of Transparent ITO Gate Recessed Channel MOSFET using Elliptical Lenslet
نویسندگان
چکیده
In this paper, we report the effect of luminous behaviour of transparent gate Recessed Channel MOSFET (RC-MOSFET).Aggressive scaling is associated with a number of higher order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET has emerged to be the ultimate solution. The proposed device has an elliptical lenslet above the RC MOSFET to focus the raytrace in to the transparent indium tin oxide (ITO) gate. The effect of illumination with the improved photogeneration rate, optical intensity, switching ratio and light absorption is studied. The work proves the effectiveness of transparent gate RCMOSFET for higher efficiency, speed, ON current, reduction in power dissipation and better temperature stability. Luminous-3D RC-MOSFET is fully integrated with ATLAS and Device 3D.
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